High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires

High performance broadband photodetector using fabricated nanowires of bismuth selenide.

Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector havi...

Broadband high photoresponse from pure monolayer graphene photodetector.

Graphene has attracted large interest in photonic applications owing to its promising optical properties, especially its ability to absorb light over a broad wavelength range, which has lead to several studies on pure monolayer graphene-based photodetectors. However, the maximum responsivity of these photodetectors is below 10 mA W(-1), which significantly limits their potential for application...

Extraordinary absorption of decorated undoped graphene.

We theoretically study absorption by an undoped graphene layer decorated with arrays of small particles. We discuss periodic and random arrays within a common formalism, which predicts a maximum absorption of 50% for suspended graphene in both cases. The limits of weak and strong scatterers are investigated, and an unusual dependence on particle-graphene separation is found and explained in ter...

High gain single GaAs nanowire photodetector

Silicon-graphene conductive photodetector with ultra-high responsivity

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly a...